advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 40v simple drive requirement r ds(on) 11.5m fast switching characteristic i d 46a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.8 /w rthj-a maixmum thermal resistance, junction-ambient 62 /w data & specifications subject to change without notice storage temperature range operating junction temperature range -55 to 150 -55 to 150 thermal data parameter 201206061 1 total power dissipation gate-source voltage + 20 continuous drain current, v gs @ 10v 46 continuous drain current, v gs @ 10v 29.2 pulsed drain current 1 parameter rating drain-source voltage 40 total power dissipation 2 ap0904gp-hf 44.6 halogen-free product 160 g d s a p0904 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-220 package is widely preferred for all commercial- industrial through hole applications. the low thermal resistance and low package cost contribute to the worldwide popular package. g d s to-220(p)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v v gs =10v, i d =30a - - 11.5 m v gs =4.5v, i d =20a - - 16 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 44 - s i dss drain-source leakage current v ds =32v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =30a - 10 16 nc q gs gate-source charge v ds =32v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6.5 - nc t d(on) turn-on delay time v ds =20v - 7 - ns t r rise time i d =30a - 65 - ns t d(off) turn-off delay time r g =3.3 ? -20- ns t f fall time v gs =10v - 6.5 - ns c iss input capacitance v gs =0v - 660 1050 pf c oss output capacitance v ds =25v - 160 - pf c rss reverse transfer capacitance f=1.0mhz - 90 - pf r g gate resistance f=1.0mhz - 2.1 4.2 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 23 - ns q rr reverse recovery charge di/dt=100a/s - 17 - nc notes: 1.pulse width limited by max. junction temperature 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap0904gp-hf r ds(on) static drain-source on-resistance 2
ap0904gp-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 40 80 120 160 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 9 10 11 12 13 14 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =20a t c =25 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =250ua
ap0904gp-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. case temperature 4 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 0 4 8 12 16 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =30a v ds =32v 0 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss operation in this area limited by r ds(on) 0 20 40 60 80 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 10 20 30 40 50 60 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) t j = -40 o c
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